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| PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: * Rugged construction with poly silicon gate * Low RDS (on) and high transconductance * Excellent high temperature stability * Very fast switching speed * Fast recovery and superior dv/dt performance * Increased reverse energy capability * Low input transfer capacitance for easy paralleling * Hermetically sealed surface mount package * TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.0 mS) Gate to Source Voltage Continuous Drain Current @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25 oC SYMBOL VDS VDG VGS ID Top & Tstg R 2JC PD 30 AMP 1/ 60 VOLTS 25mS N-CHANNEL POWER MOSFET 28 PIN CLCC VALUE 100 60 20 30 -55 to +150 3.5 35 UNIT Volts Volts Volts Amps o C o C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15 - 28 DRAIN: 5 - 11 GATE: 2, 3, 13, 14 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0001A PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source 60% of Rated ID, TC = 25oC ON State Resistance 2/ Rated ID, TC = 25oC (VGS = 10 V) 60% of Rated ID, TC = 150oC Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Zero Gate Voltage Drain Current (VDS =80% rated VDS, VGS =0 V, T A = 25oC ) (VDS =80% rated VDS, VGS =0 V, TA = 125oC ) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forward Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance At rated VGS VGS =10 Volts 50% rated VDS Rated ID VDD =50% rated VDS rated ID RG = 6.2 S SYMBOL MIN TYP MAX UNIT BVDSS RDS(on) VGS(th) gfs 60 2 15 23 25 27 25 27 4 - V mS 35 V S(E) IDSS IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD - 83 13 40 20 35 65 40 1.47 70 2600 700 260 10 100 100 100 100 20 55 40 70 130 80 1.6 150 2900 1100 275 :A nA nC nsec V nsec TJ =25oC IF = 10A di/dt = 100A/:sec VGS =0 Volts VDS =25 Volts f =1 MHz trr Ciss Coss Crss pF For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: 1/ Die Rating: 75Amps. 2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize RDS(on) and maximize current carrying capability. |
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